Investigation of interface traps at Si/SiO2 interface of SOI pMOSFETs induced by Fowler–Nordheim tunneling stress using the DCIV method-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Investigation of interface traps at Si/SiO2 interface of SOI pMOSFETs induced by Fowler–Nordheim tunneling stress using the DCIV method

Published:2018-08-10 Issue:9 Volume:124 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Li Xiaojing,Zeng Chuanbin,Wang Ruiheng,Gao Linchun,Yan Weiwei,Luo Jiajun,Han Zhengsheng

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/article/10.1007/s00339-018-2011-9/fulltext.html

Reference25 articles.

1. B.B. Jie, C.-T. Sah, IEEE Int. Conf. Solid State Integr. Circuit Technol. 6, 1214–1219 (2006)

2. C.-T. Sah, B.B. Jie, IEEE Int. Conf. Solid State Integr. Circuit Technol. 6,1206–1213 (2006)

3. C. Hu, S.C. Tam, F.C. Hsu, P.K. Ko, T.Y. Chan, K.W. Terrill, IEEE Electron Device Lett. ED-32, 11 (1985)

4. H. Guan, B.J. Cho, M.F. Li, Z. Xu, Y.D. He, Z. Dong, IEEE Electron Device Lett. ED-48, 3 (2001)

5. É O’Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S.B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M.E. Pemble, R.M. Wallace, P.K. Hurley, J. Appl. Phys. 109(2), 024101 (2011)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Emulation of optical and electrical synaptic functions in MoS₂/SnSe₂ van der Waals heterojunction memtransistors;Japanese Journal of Applied Physics;2024-05-01

2. Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method;Applied Physics Letters;2023-03-13

3. Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors;IEEE Transactions on Electron Devices;2023-02

4. Study of traps in low-temperature polysilicon thin film transistors using a current transient method;Semiconductor Science and Technology;2021-11-26

5. Applications of Direct-Current Current–Voltage Method to Total Ionizing Dose Radiation Characterization in SOI NMOSFETs with Different Process Conditions;Electronics;2021-04-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3