Abstract
As a promising candidate in space radiation hardened applications, silicon-on-insulator (SOI) devices face the severe problem of total ionizing dose (TID) radiation because of the thick buried oxide (BOX) layer. The direct-current current–voltage (DCIV) method was applied for studying TID radiation of SOI metal–oxide–semiconductor field–effect transistors (MOSFETs) with different manufacture processes. It is found that the peak of high-voltage well (PX) devices shows a larger left-shift and a slower multitude increase along with radiation dose, compared with that of low-voltage well (PV) devices. It is illustrated that the high P-type impurity concentration near back interface makes it more difficult to break up silicon hydrogen bonds, which gives the PX devices superiority in resisting the build-up of interface traps. The study results indicate that increasing doping concentration of the body region near the back-gate interface might be an alternative radiation hardening technique of SOI MOSFET devices to avoid the parasitic back transistors’ leakage.
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering