Interface defects of ultrathin rapid‐thermal oxide on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109284
Reference8 articles.
1. Rapid thermal processing of thin gate dielectrics. Oxidation of silicon
2. Interface trap transformation in radiation or hot-electron damaged MOS structures
3. Interface Characteristics of Metal‐Oxide‐Semiconductor Capacitors with Ultrathin Oxides
4. Process dependence of the SiO2/Si(100) interface trap density of ultrathin SiO2films
5. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
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