Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide-Reference-Cited by-同舟云学术

Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide

Published:2011-07 Issue:7 Volume:45 Page:944-949
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Goldman E. I.,Kukharskaya N. F.,Narishkina V. G.,Chucheva G. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611070098.pdf

Reference23 articles.

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2. E. H. Poindexter, Semicond. Sci. Technol. 4, 961 (1989).

3. G. Cellere, S. Gerardin, and Al. Paccagnella, in Defects in MicroelectronicMaterials and Devices, Ed. by D. M. Fleetwood, S. T. Pantelides, and R. D. Schrimpf (CRC Press, Boca Raton, 2008), ch. 17, p. 497.

4. V. A. Gritsenko, Usp. Fiz. Nauk 179, 921 (2009) [Phys. Usp. 52, 869 (2009)].

5. J. Nissan-Cohen, Appl. Surf. Sci. 39, 511 (1989).

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