Process dependence of the SiO2/Si(100) interface trap density of ultrathin SiO2films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351665
Reference30 articles.
1. Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si Structures
2. Low-Temperature Reduction of Fast Surface States Associated with Thermally Oxidized Silicon
3. Low‐temperature annealing and hydrogenation of defects at the Si–SiO2 interface
4. Elimination and Generation of Si ‐ SiO2 Interface Traps by Low Temperature Hydrogen Annealing
5. Effect of high-temperature H2-anneals on the slow-trapping instability of MOS structures
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