Interface trap transformation in radiation or hot-electron damaged MOS structures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/4/i=12/a=009/pdf
Reference11 articles.
1. Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors
2. Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS Capacitors
3. Two‐stage process for buildup of radiation‐induced interface states
4. Theory of thePbcenter at the <111> Si/SiO2interface
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