Two‐stage process for buildup of radiation‐induced interface states
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326344
Reference9 articles.
1. Role Transport and Charge Relaxation in Irradiated SiO2 MOS Capacitors
2. Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS Capacitors
3. Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors
4. Comparison of interface‐state buildup in MOS capacitors subjected to penetrating and nonpenetrating radiation
5. Frequency and temperature tests for lateral nonuniformities in MIS capacitors
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