Quantification of Substrate Current Caused by an Individual Trap at Different Locations and Energies, Prevailing on Si/SiO₂ Interface or Si Substrate of n-MOSFETs
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Published:2022-08-31
Issue:4
Volume:22
Page:234-243
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ISSN:1598-1657
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Container-title:JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
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language:en
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Short-container-title:JSTS
Author:
Shahzadi Nosheen,Baeg Sanghyeon
Publisher
The Institute of Electronics Engineers of Korea
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials