Cu-Cu low temperature bonding based on lead-free solder with graphene interlayer
Author:
Affiliation:
1. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
Funder
the National Natural Science Foundation of China
the Fundamental Research Founds for the Central University of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5116615
Reference25 articles.
1. Wafer-level Cu–Cu bonding technology
2. Room-Temperature Cu–Cu Bonding in Ambient Air Achieved by Using Cone Bump
3. Formation of Cu–Cu interfaces with ideal adhesive strengths via room temperature pressure bonding in ultrahigh vacuum
4. Novel Cu-to-Cu Bonding With Ti Passivation at 180$^{\circ}{\rm C}$ in 3-D Integration
5. Lead (Pb)-free solders for electronic packaging
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2. Recent advances in Sn-based lead-free solder interconnects for microelectronics packaging: Materials and technologies;Journal of Materials Research and Technology;2023-07
3. High performance Sn-Cu low temperature bonding based on graphene interlayer;2022 23rd International Conference on Electronic Packaging Technology (ICEPT);2022-08-10
4. Low-Temperature Diffusion Behavior of Ti in Cu/Ti-Ti/Cu Bonding;Journal of Electronic Materials;2022-03-08
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