Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a-plane sapphire substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121871
Reference13 articles.
1. Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
2. Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates
3. GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer
4. Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor phase epitaxy
5. Gallium arsenide and other compound semiconductors on silicon
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4. Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by MOCVD;Journal of Crystal Growth;2009-05
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