Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120343
Reference9 articles.
1. Emerging gallium nitride based devices
2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
3. Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
4. GaN grown on hydrogen plasma cleaned 6H‐SiC substrates
5. Temperature‐mediated phase selection during growth of GaN on (111)A and (1̄1̄1̄)B GaAs substrates
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