Homoepitaxial growth of high-quality GaN nanoarrays for enhanced UV luminescence-Reference-Cited by-同舟云学术

Homoepitaxial growth of high-quality GaN nanoarrays for enhanced UV luminescence

Published:2022 Issue:13 Volume:24 Page:2472-2478
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Liu Baodan¹²^ORCID,Liu Qingyun³,Yang Wenjin³,Li Jing¹²,Labbé Christophe⁴,Portier Xavier⁴,Zhang Xinglai³^ORCID,Yao Jinlei⁵

Affiliation:

1. School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China

2. Foshan Graduate School of Northeastern University, No. 2, Zhihui Road, Shunde District, Foshan, 528300, China

3. Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China

4. CIMAP CNRS/CEA/ENSICAEN/Normandie University, 6 Bd Maréchal Juin, 14050 Caen Cedex 4, France

5. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China

Abstract

Crystalline GaN nanoarrays with good alignment and strong UV luminescence have been homoepitaxially grown on a [0001]-oriented GaN substrate due to their superior lattice and thermal conductivity matching with the beneath GaN substrate (see figure).

Funder

Agence Nationale de la Recherche

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CE/D1CE01519B

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