The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. High-frequency measurements of AlGaN/GaN HEMTs at high temperatures
2. Ultraviolet and violet light‐emitting GaN diodes grown by low‐pressure metalorganic chemical vapor deposition
3. 30-W/mm GaN HEMTs by Field Plate Optimization
4. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
5. Anisotropic epitaxial lateral growth in GaN selective area epitaxy
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