Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures-Reference-Cited by-同舟云学术

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Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures

Published:2018-05-03 Issue:5 Volume:8 Page:198
ISSN:2073-4352
Container-title:Crystals
language:en
Short-container-title:Crystals

Author:

Gu Wenping,Xu Xiaobo,Zhang Lin,Gao Zhiyuan,Hu Xiaochuan,Zhang Zan

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

Link

http://www.mdpi.com/2073-4352/8/5/198/pdf

Reference19 articles.

1. Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN

2. Degradation mechanisms of AlGaN/GaN HEMTs under 800 MeV Bi ions irradiation

3. Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs

4. In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation

5. Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review;Microelectronics Reliability;2024-08

2. Low‐Fluence Neutron Irradiation Effects on AlGaN/GaN HEMTs;Advanced Materials Technologies;2023-01-29

3. Neutron irradiation effects on gallium nitride-based blue LEDs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-05

4. Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes;Microelectronics Reliability;2021-10

5. Understanding High-Energy 75-MeV Sulfur-Ion Irradiation-Induced Degradation in GaN-Based Heterostructures: The Role of the GaN Channel Layer;IEEE Transactions on Electron Devices;2021-01

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