Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation-Reference-Cited by-同舟云学术

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Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

Published:2008-04-15 Issue:8 Volume:103 Page:083707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kurakin A. M.,Vitusevich S. A.,Danylyuk S. V.,Hardtdegen H.,Klein N.,Bougrioua Z.,Danilchenko B. A.,Konakova R. V.,Belyaev A. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2903144

Reference37 articles.

1. Trapping effects and microwave power performance in AlGaN/GaN HEMTs

2. A comparative study of surface passivation on AlGaN/GaN HEMTs

3. Growth and passivation of AlGaN/GaN heterostructures

4. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

5. The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors

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4. Localized strain relaxation effect on gamma irradiated AlGaN/GaN high electron mobility transistors;Applied Physics Letters;2022-12-05

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