In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation-Reference-Cited by-同舟云学术

In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation

Author:

Kumar Ashish¹^ORCID,Singh R.²,Kumar Parmod¹^ORCID,Singh Udai B.¹^ORCID,Asokan K.¹,Karaseov Platon A.³^ORCID,Titov Andrei I.³^ORCID,Kanjilal D.¹^ORCID

Affiliation:

1. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, Vasant Kunj, New Delhi 110067, India

2. Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India

3. Department of Physical Electronics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya st., 29, Saint Petersburg, Russia

Funder

Department of Science and Technology, Ministry of Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference35 articles.

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