Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs

Published:2013-12 Issue:6 Volume:60 Page:4080-4086
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Chen Jin,Puzyrev Yevgeniy S.,Zhang Cher Xuan,Zhang En Xia,McCurdy Michael W.,Fleetwood Daniel M.,Schrimpf Ronald D.,Pantelides Sokrates T.,Kaun Stephen W.,Kyle Erin C. H.,Speck James S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/6678952/06651647.pdf?arnumber=6651647

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1. Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs;IEEE Transactions on Electron Devices;2024-02

2. Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors;Journal of Applied Physics;2024-01-08

3. Defect and Impurity-Center Activation and Passivation in Irradiated AlGaN/GaN HEMTs;IEEE Transactions on Nuclear Science;2024-01

4. Mechanism of Nonuniform Damage Induced by Low-Energy Protons in GaAs MESFETs;IEEE Transactions on Nuclear Science;2023-12

5. Analysis of radiation defects in gallium nitride using deep level transient spectra and first principles methods;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-12

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