Depth-dependent mosaic tilt and twist in GaN epilayer: An approximate evaluation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/6/068102/pdf
Reference24 articles.
1. X-ray diffraction of III-nitrides
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3. Comparative study of different properties of GaN films grown on (0001) sapphire using high and low temperature AlN interlayers
4. Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
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4. Growth of a -Plane GaN Films on r -Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy;Chinese Physics Letters;2015-08
5. Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN film;Acta Physica Sinica;2015
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