Growth of a -Plane GaN Films on r -Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/32/8/088103/pdf
Reference22 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Yellow Luminescence of Polar and Nonpolar GaN Nanowires on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition
3. Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)
4. Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density
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3. Effect of different substrates on material properties of cubic GaN thin films grown by LP-MOCVD method;Journal of Crystal Growth;2023-01
4. Structural characteristics and defect states of intrinsic GaN epi-layers in a high power device structure;Journal of the Korean Physical Society;2021-06-18
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