Influence of double AlN buffer layers on the qualities of GaN films prepared by metal—organic chemical vapour deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference22 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. Optical and structural investigation of a -plane GaN layers on r -plane sapphire with nucleation layer optimization
4. Growth of AlN on sapphire substrates by using a thin AlN buffer layer grown two-dimensionally at a very low V/III ratio
5. Using optical reflectance to measure GaN nucleation layer decomposition kinetics
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1. Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation;Optics Express;2023-06-06
2. The performance improvement of AlGaN/GaN heterojunction by using nano-patterned sapphire substrate;Materials Science in Semiconductor Processing;2022-06
3. Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD;Superlattices and Microstructures;2018-05
4. Investigation on HT-AlN Nucleation Layers and AlGaN Epifilms Inserting LT-AlN Nucleation Layer on C-Plane Sapphire Substrate;Journal of the Optical Society of Korea;2016-02-25
5. Depth-dependent mosaic tilt and twist in GaN epilayer: An approximate evaluation;Chinese Physics B;2014-05-30
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