Optical and structural investigation of a -plane GaN layers on r -plane sapphire with nucleation layer optimization
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference19 articles.
1. Anisotropy of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition
2. Optimization of a-plane GaN growth by MOCVD on r-plane sapphire
3. Characteristics of the improved a-plane GaN films grown on r-plane sapphire with two-step AlN buffer layer
4. Reduced structural defect densities in a-plane GaN layers on r-plane sapphire through buffer layer engineering
5. Improvements in a-plane GaN crystal quality by AlN/AlGaN superlattices layers
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. C-Implanted N-Polar GaN Films Grown by Metal Organic Chemical Vapor Deposition;Chinese Physics Letters;2016-12
2. Decline of nucleation in the heating process with a high heating rate;Chinese Physics B;2014-07-31
3. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy;Journal of Applied Physics;2014-06-07
4. Improvement in a -plane GaN crystalline quality using wet etching method;Chinese Physics B;2014-04
5. Study on the relationships between Raman shifts and temperature range fora-plane GaN using temperature-dependent Raman scattering;Chinese Physics B;2013-02
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