Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/11/118101/pdf
Reference27 articles.
1. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy
2. Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD
3. Low noisep-π-nGaN ultraviolet photodetectors
4. Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition
5. Optimization of the parameters for growth high-qulity GaN film by hydride vapor phase epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effects of surface migration on InGaN/GaN multiple quantum wells selectively grown on periodic stripe openings separated by large SiO2 covered spacing on Si (111) substrates;Materials Science in Semiconductor Processing;2018-11
2. Influence of adatom migration on wrinkling morphologies of AlGaN/GaN micro-pyramids grown by selective MOVPE;Chinese Physics B;2017-06
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