Optimization of the parameters for growth high-qulity GaN film by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Optimization of the parameters for growth high-qulity GaN film by hydride vapor phase epitaxy

Published:2013 Issue:20 Volume:62 Page:208101
ISSN:1000-3290
Container-title:Acta Physica Sinica
language:
Short-container-title:wlxb

Author:

Zhang Li-Li ,Liu Zhan-Hui ,Xiu Xiang-Qian ,Zhang Rong ,Xie Zi-Li

Publisher

Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE;Chinese Physics B;2015-11

2. Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN film;Acta Physica Sinica;2015

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