Effects of surface migration on InGaN/GaN multiple quantum wells selectively grown on periodic stripe openings separated by large SiO2 covered spacing on Si (111) substrates-Reference-Cited by-同舟云学术

Effects of surface migration on InGaN/GaN multiple quantum wells selectively grown on periodic stripe openings separated by large SiO2 covered spacing on Si (111) substrates

Published:2018-11 Issue: Volume:87 Page:181-186
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Han Xiaobiao,Luo Hui,Yang Hang,Chen Jie,Zhong Changming,Liang Jiezhi,Xing Jieying,Wu Zhisheng,Liu Yang,Zhang Baijun

Funder

National Key Research and Development Program

Nature Science Foundation of China

International Sci. & Tech. Collaboration Program of Guangzhou City, China

Science & Technology Plan of Guangdong Province

Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics, Sun Yat-sen University

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Freestanding 2-in GaN layers using lateral overgrowth with HVPE

2. Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

3. GaN Substrate Technologies for Optical Devices

4. Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth

5. Classic and novel methods of dislocation reduction in heteroepitaxial nitride layers

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