Semipolar{112̅2}InGaN/GaN multiple quantum well optically pumped laser diodes selectively grown on Si (111) substrates

Author:

Han Xiaobiao,Liu Yuebo,Ren Yuan,Xing Jieying,Zhu Tongtong,Wu Zhisheng,Liu Yang,Zhang Baijun

Funder

National Key Research and Development Program

National Natural Science Foundation of China

International Science & Technology Collaboration Program

Science & Technology Plan of Guangdong Province

Sun Yat-sen University

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. 硅基GaN微腔制作及其激射特性(特邀);ACTA PHOTONICA SINICA;2022

2. III-nitride semiconductor lasers grown on Si;Progress in Quantum Electronics;2021-05

3. Recent Developments in Semipolar InGaN Laser Diodes;Semiconductors;2021-02

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