Classic and novel methods of dislocation reduction in heteroepitaxial nitride layers-Reference-Cited by-同舟云学术

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Classic and novel methods of dislocation reduction in heteroepitaxial nitride layers

Published:2005-02 Issue:3 Volume:2 Page:994-1005
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Jasinski J.¹

Affiliation:

1. School of Engineering, University of California, Merced, CA 95301, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200460608

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semipolar{112̅2}InGaN/GaN multiple quantum well optically pumped laser diodes selectively grown on Si (111) substrates;Materials Science in Semiconductor Processing;2019-03

2. Effects of surface migration on InGaN/GaN multiple quantum wells selectively grown on periodic stripe openings separated by large SiO2 covered spacing on Si (111) substrates;Materials Science in Semiconductor Processing;2018-11

3. Structural defects in GaN revealed by transmission electron microscopy;Japanese Journal of Applied Physics;2014-09-08

4. Overgrowth of GaN on GaN nanowires produced by mask-less etching;Journal of Crystal Growth;2012-08

5. Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN;Journal of Crystal Growth;2012-04

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