Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN-Reference-Cited by-同舟云学术

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Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

Published:2012-04 Issue:1 Volume:344 Page:59-64
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ali M.,Romanov A.E.,Suihkonen S.,Svensk O.,Sintonen S.,Sopanen M.,Lipsanen H.,Nevedomsky V.N.,Bert N.A.,Odnoblyudov M.A.,Bougrov V.E.

Funder

Russian Foundation for Basic Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Trends in markets for GaN devices

2. Pendeoepitaxy of gallium nitride thin films

3. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

4. Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

5. Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

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1. Influence of Precursor Concentration on Crystalline Quality of GaN Thin Films Grown on a Sapphire Wafer;Journal of Manufacturing Science and Engineering;2021-05-07

2. Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates;Journal of Applied Physics;2019-08-28

3. Effective optimization and analysis of white LED properties by using nano-honeycomb patterned phosphor film;Optics Express;2016-08-09

4. TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern;Journal of Crystal Growth;2016-07

5. Enabling High-Injection Current Light-Emitting Diodes Prepared on 10-$\mu \text{m}$ -Thick GaN Films Grown by Hydride Vapor Phase Epitaxy;IEEE Transactions on Electron Devices;2015-09

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