Funder
Russian Science Foundation
Ministry of Education and Science of the Russian Federation
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. High Quality, Low Cost Ammonothermal Bulk GaN Substrates
2. Tadao Hashimoto, Edward Letts, Development of cost-effective native substrates for gallium nitride-based optoelectronic devices via ammonothermal growth, optoelectronics - devices and applications, In: Prof. P. Predeep (Ed.), ISBN: 978-953-307-576-1, InTech, Available from: http://www.intechopen.com/books/optoelectronics-devices-and-applications/development-of-cost-effective-native-substrates-for-gallium-nitride-based-optoelectronic-devices-via
3. Modeling of threading dislocation reduction in growing GaN layers
4. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
5. H. Marchand, J.P. Ibbetson, P.T. Fini, S. Chichibu, S.J.Rosner, S. Keller, S.P. DenBaars, J.S. Speck, U.K.Mishra, Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapour deposition, in: Proceedings of the 25th International Symposium on the Compound Semiconductors, Nara, Japan, 1998.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献