Freestanding 2-in GaN layers using lateral overgrowth with HVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
2. Bowing of thick GaN layers grown by HVPE using ELOG
3. Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy
4. Growth of thick GaN layers with hydride vapour phase epitaxy
5. Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten
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1. Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing;Applied Physics A;2021-08-10
2. Fabrication of Pyramid Structure Substrate Utilized for Epitaxial Growth Free-Standing GaN;Crystals;2019-10-23
3. Laser slicing: A thin film lift-off method for GaN-on-GaN technology;Results in Physics;2019-06
4. Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer;Journal of Physics: Conference Series;2019-03
5. Thick GaN Film Stress-induced Self-separation;2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus);2019-01
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