Laser slicing: A thin film lift-off method for GaN-on-GaN technology-Reference-Cited by-同舟云学术

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Laser slicing: A thin film lift-off method for GaN-on-GaN technology

Published:2019-06 Issue: Volume:13 Page:102233
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Voronenkov Vladislav,Bochkareva Natalia,Gorbunov Ruslan,Zubrilov Andrey,Kogotkov Viktor,Latyshev Philipp,Lelikov Yuri,Leonidov Andrey,Shreter Yuri

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference52 articles.

1. Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs;Chung;IEEE Electron Device Lett,2009

2. Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing;Trindade;Opt Express,2015

3. Heterogeneous integration of compound semiconductors;Moutanabbir;Ann Rev Mater Res,2010

4. Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping;Pomeroy;Appl Phys Lett,2014

5. Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes;Iida;Appl Phys Lett,2014

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2. A review of ultra-short pulse laser micromachining of wide bandgap semiconductor materials: SiC and GaN;Materials Science in Semiconductor Processing;2024-09

3. Exploring Inorganic Flexible Electronics: III‐Nitride Light‐Emitting Diode Epilayers on Wafer‐Scale Exfoliable Mica Substrate;Advanced Electronic Materials;2024-08-12

4. Flexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process;Japanese Journal of Applied Physics;2024-05-01

5. Semiconductor Membrane Exfoliation: Technology and Application;Advanced Electronic Materials;2024-04-29

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