Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing
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Published:2021-08-10
Issue:9
Volume:127
Page:
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ISSN:0947-8396
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Container-title:Applied Physics A
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language:en
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Short-container-title:Appl. Phys. A
Author:
Sena HadiORCID, Tanaka Atsushi, Wani Yotaro, Aratani Tomomi, Yui Toshiki, Kawaguchi Daisuke, Sugiura Ryuji, Honda Yoshio, Igasaki Yasunori, Amano Hiroshi
Funder
Ministry of Internal Affairs and Communications
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Reference41 articles.
1. A. Lidow, M. de Rooij, J. Strydom, D. Reusch, J. Glaser, GaN Transistors for Efficient Power Conversion (John Wiley & Sons Ltd, 2019) 2. H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P.R. Chalker, M. Charles, K.J. Chen, N. Chowdhury, R. Chu, C. De Santi, M.M. De Souza, S. Decoutere, L. Di Cioccio, B. Eckardt, T. Egawa, P. Fay, J.J. Freedsman, L. Guido, O. Häberlen, G. Haynes, T. Heckel, D. Hemakumara, P. Houston, J. Hu, M. Hua, Q. Huang, A. Huang, S. Jiang, H. Kawai, D. Kinzer, M. Kuball, A. Kumar, K.B. Lee, X. Li, D. Marcon, M. März, R. McCarthy, G. Meneghesso, M. Meneghini, E. Morvan, A. Nakajima, E.M.S. Narayanan, S. Oliver, T. Palacios, D. Piedra, M. Plissonnier, R. Reddy, M. Sun, I. Thayne, A. Torres, N. Trivellin, V. Unni, M.J. Uren, M. Van Hove, D.J. Wallis, J. Wang, J. Xie, S. Yagi, S. Yang, C. Youtsey, R. Yu, E. Zanoni, S. Zeltner, Y. Zhang, The 2018 GaN power electronics roadmap. J. Phys. D Appl. Phys. 51(16), 163001 (2018) 3. J. Derluyn, M. Germain, E. Meissner, Gallium Nitride-Enabled High Frequency and High Efficiency Power Conversion (Springer, 2018) 4. M. Amilusik, T. Sochacki, B. Łucznik, M. Boćkowski, B. Sadovyi, A. Presz, I. Dzięcielewski, I. Grzegory, Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask. J. Cryst. Growth 380, 99–105 (2013) 5. F. Lipski, T. Wunderer, S. Schwaiger, F. Scholz, “Fabrication of freestanding 2″ GaN wafers by hydride vapour phase epitaxy and self-separation during cooldown.” Physica Stat. Solidi (a) 207(6), 1287–1291 (2010)
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