Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference6 articles.
1. Epitaxial Lateral Overgrowth of GaN
2. Bowing of thick GaN layers grown by HVPE using ELOG
3. Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
4. Growth optimization for thick crack‐free GaN layers on sapphire with HVPE
5. PhD thesis, University of Bremen, 2002.
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