Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/10/6/605/pdf
Reference21 articles.
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1. Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy;Chinese Physics B;2023-02-01
2. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays;Light: Science & Applications;2021-04-30
3. Fabrication of nano-patterned sapphire substrates by combining nanoimprint lithography with edge effects;CrystEngComm;2019
4. Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy;Nanomaterials;2018-09-10
5. A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD;CrystEngComm;2018
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