Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy

Published:2000-05-15 Issue:Part 2, No. 5B Volume:39 Page:L449-L452
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Haino Masahiro,Yamaguchi Motoo,Miyake Hideto,Motogaito Atsushi,Hiramatsu Kazumasa,Kawaguchi Yasutoshi,Sawaki Nobuhiko,Iyechika Yasushi,Maeda Takayoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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3. Communication—Corrosion Behavior of Tungsten Metal Gate in the Presence of Hydrogen Peroxide at Acidic Medium;ECS Journal of Solid State Science and Technology;2017

4. Enhanced Internal Quantum Efficiency and Light Extraction Efficiency of Light-emitting Diodes with Air-gap Photonic Crystal Structure Formed by Tungsten Nano-mask;Bulletin of the Korean Chemical Society;2014-03-20

5. Mechanical Properties of Nanoporous GaN and Its Application for Separation and Transfer of GaN Thin Films;ACS Applied Materials & Interfaces;2013-10-28