Benzethonium chloride as a tungsten corrosion inhibitor in neutral and alkaline media for the post-chemical mechanical planarization application-Reference-Cited by-同舟云学术

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Benzethonium chloride as a tungsten corrosion inhibitor in neutral and alkaline media for the post-chemical mechanical planarization application

Published:2023-08 Issue: Volume:643 Page:465-479
ISSN:0021-9797
Container-title:Journal of Colloid and Interface Science
language:en
Short-container-title:Journal of Colloid and Interface Science

Author:

Punathil Meethal Ranjith,Jalalzai Palwasha,Muskan ,Kumar Sumit,Peter Jerome,Klipp Andreas,Kim Tae-Gon,Park Jin-Goo

Funder

Hanyang University

Publisher

Elsevier BV

Subject

Colloid and Surface Chemistry,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Reference105 articles.

1. Characterization of Non-amine-based Post-copper Chemical Mechanical Planarization Cleaning Solution;Manivannan;Microelectron. Eng.,2014

2. J.-G. Park, T.-G. Kim, Fundamentals of Post-CMP Cleaning, MRS Proc. 991 (2007) 0991-C02-01. https://link.springer.com/article/10.1557/PROC-0991-C02-01.

3. N.P. Yerriboina, M.K. Poddar, J.-G. Park, Chapter 4 - Particle Removal by Surfactants During Semiconductor Cleaning, in: R. Kohli, K.L. Mittal (Eds.), Surfactants in Precision Cleaning, Elsevier, 2022, pp. 161-191. https://www.sciencedirect.com/science/article/pii/B978012822216400001X?via%3Dihub.

4. Recent Advances in Barrier Layer of Cu Interconnects;Li;Materials,2020

5. Integration Methodology of Chemical Vapor Deposition TiN, Chemical Vapor deposition W and W Chemical Mechanical Planarization for Sub-quarter Micron Process Application;Wu;J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct. Process., Meas., Phenomena,1999

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