Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
2. Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm
3. 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
4. Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy
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1. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09
2. High quality (In)GaN films on homoepitaxial substrates;Superlattices and Microstructures;2017-02
3. Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2013-05
4. Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer;Acta Physica Polonica A;2011-06
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