Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy

Published:2013-05 Issue: Volume:371 Page:7-10
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhou Kun,Liu Jianping,Zhang Shuming,Li Zengcheng,Feng Meixin,Li Deyao,Zhang Liqun,Wang Feng,Zhu Jianjun,Yang Hui

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

2. Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates

3. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

4. HVPE growth of high quality GaN layers

5. Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

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1. The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures;Materials Science and Engineering: B;2024-02

2. Effect of growth temperature of NH3-MBE grown GaN-on-Si layers on donor concentration and leakage currents;Journal of Crystal Growth;2024-01

3. Nanostars in Highly Si-Doped GaN;Crystal Growth & Design;2023-06-11

4. Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching;Applied Surface Science;2023-05

5. Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates;Journal of Crystal Growth;2022-06

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