Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/42/i=11A/a=L1293/pdf
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1. Structural Stability of Vicinal AlN(0001) and GaN(0001) Surfaces with Steps and Kinks under Metal–Organic Vapor-Phase Epitaxy Condition: A First-Principles Study;Crystal Growth & Design;2024-07-02
2. Ab initio study for adsorption behavior on AlN(0001) surface with steps and kinks during metal-organic vapor-phase epitaxy;Japanese Journal of Applied Physics;2024-01-29
3. Step flow growth of β-Ga2O3 films on off-axis 4H-SiC substrates by LPCVD;Surfaces and Interfaces;2023-04
4. Dislocation reduction mechanism os GaN films on vicinal sapphire substrates;Acta Physica Sinica;2023
5. Influence of sapphire substrate miscut on the surface morphology and microstructure of AlN films grown by HVPE;Journal of Crystal Growth;2022-08
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