Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2825471
Reference23 articles.
1. Morphology and characterization of GaN single crystals grown in a Na flux
2. Morphology and characterization of GaN single crystals grown in a Na flux
3. Growth and characterization of freestanding GaN substrates
4. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
5. Growth of 2 inch ZnO bulk single crystal by the hydrothermal method
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1. Local augmentation of phonon transport at GaInN/GaN heterointerface by introducing a graded variation of InN mole fraction;Applied Physics Letters;2024-07-01
2. Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method;Applied Physics Letters;2024-04-29
3. Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface;Materials Science in Semiconductor Processing;2022-11
4. Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers;Applied Physics Letters;2020-04-06
5. Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy;Scientific Reports;2016-06-24
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