Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface-Reference-Cited by-同舟云学术

Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface

Published:2022-11 Issue: Volume:150 Page:106905
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Nakayama Tomoya,Ito Kotaro,Ma Bei^ORCID,Iida Daisuke^ORCID,Najmi Mohammed A.,Ohkawa Kazuhiro^ORCID,Ishitani Yoshihiro^ORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference45 articles.

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5. Electron-lattice Interactions in Semiconductors;Shinozuka,2021

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