Effect of threading defects on InGaN∕GaN multiple quantum well light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2822395
Reference14 articles.
1. InGaN-based violet laser diodes
2. Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodes
3. InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
4. Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors
5. Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching
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