Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers-Reference-Cited by-同舟云学术

Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers

Published:2020-04-06 Issue:14 Volume:116 Page:142107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Okamoto Shungo¹,Saito Naomichi¹,Ito Kotaro¹,Ma Bei¹,Morita Ken¹^ORCID,Iida Daisuke²,Ohkawa Kazuhiro²,Ishitani Yoshihiro¹^ORCID

Affiliation:

1. Graduate School of Electrical and Electronic Engineering, Chiba University 1-33 Yayoicho, Inage-ku, Chiba 263-8522, Japan

2. Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia

Funder

Japan Society for the Promotion of Science

King Abdullah University of Science and Technology

Japan Society for the Promotion of Science London

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0003491

Reference47 articles.

1. C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps