Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4863225
Reference14 articles.
1. Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
2. Angular Distributions of (α, n) Reaction son Be and C
3. The vacancy in silicon: Identical diffusion properties at cryogenic and elevated temperatures
4. Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion
5. Radiation Enhanced Silicon Self-Diffusion and the Silicon Vacancy at High Temperatures
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