Study on defect annealing potential and bulk micro defect formation using high temperature RTA conditions for Cz‐grown silicon
Author:
Affiliation:
1. Siltronic AGHanns‐Seidel‐Platz 481737 MünchenGermany
2. IHPIm Technologiepark 2515236 Frankfurt (Oder)Germany
Publisher
Wiley
Subject
Condensed Matter Physics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700119
Reference22 articles.
1. Combined Effect of Rapid Thermal Annealing and Crystal Nature on the Gate Oxide Reliability of Czochralski Silicon
2. Getter Effects in Low Oxygen and High Oxygen Czochralski Silicon Wafers
3. Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers
4. H.Sudo K.Araki T.Aoki andS.Maeda JSPS Si Symposium Proceedings Nov. 21–25 Kona Hawaii USA (2016).
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