Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. The mechanism of swirl defects formation in silicon
2. Vacancy-type microdefect formation in Czochralski silicon
3. Vacancy and self-interstitial concentration incorporated into growing silicon crystals
4. Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions
5. Silicon Self-Diffusion in Isotope Heterostructures
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2. Conversion of silicon wafer type from perfect-interstitial to perfect-vacancy by rapid thermal process;Journal of Crystal Growth;2024-04
3. Conversion of Silicon Wafer Type from Perfect-Interstitial to Perfect-Vacancy by Rapid Thermal Process;2024
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5. Configurational entropy significantly influences point defect thermodynamics and diffusion in crystalline silicon;Physical Review Materials;2022-06-27
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