Oxygen-assisted synthesis of hBN films for resistive random access memories-Reference-Cited by-同舟云学术

Oxygen-assisted synthesis of hBN films for resistive random access memories

Published:2019-08-12 Issue:7 Volume:115 Page:073101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Weiyi¹²^ORCID,Zhuang Pingping¹²,Akinwande Deji²,Zhang Xue-Ao¹^ORCID,Cai Weiwei¹

Affiliation:

1. Department of Physics, Key Laboratory of Low Dimensional Condensed Matter Physics, Jiujiang Research Institute, Xiamen University, Xiamen 361005, China

2. Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78757, USA

Funder

NSF NNCI

China Scholarship Council

Fok Ying Tung Education Foundation

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5100495

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