Resistive switching behaviors of oxygen-rich TaOx films prepared by reactive magnetron sputtering
Author:
Affiliation:
1. College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
2. Peter Grunberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Jiangsu Province
Publisher
Informa UK Limited
Subject
Ceramics and Composites
Link
https://www.tandfonline.com/doi/pdf/10.1080/21870764.2023.2216563
Reference38 articles.
1. Understanding the conduction and switching mechanism of Ti/AlOx/TaOx/Pt analog memristor
2. Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta2O5 embedded layer for neuromorphic computing
3. Bipolar switching properties and electrical conduction mechanism of manganese oxide RRAM devices
4. Forming-Free TaOxBased RRAM Device with Low Operating Voltage and High On/Off Characteristics
5. Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device
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