Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching-Reference-Cited by-同舟云学术

Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching

Author:

Hubbard William A.¹²,Kerelsky Alexander¹²,Jasmin Grant¹²,White E. R.¹²,Lodico Jared¹²,Mecklenburg Matthew³,Regan B. C.¹²

Affiliation:

1. Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States

2. California NanoSystems Institute, University of California, Los Angeles, California 90095, United States

3. Center for Electron Microscopy and Microanalysis, University of Southern California, Los Angeles, California 90089, United States

Funder

Division of Materials Research

Defense Advanced Research Projects Agency

Microelectronics Advanced Research Corporation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

Reference30 articles.

2. Emerging Research Devices. Presented atthe International Technology Roadmap for Semiconductors (ITRS), (2013.

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