Metal oxide resistive memory switching mechanism based on conductive filament properties-Reference-Cited by-同舟云学术

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Metal oxide resistive memory switching mechanism based on conductive filament properties

Published:2011-12-15 Issue:12 Volume:110 Page:124518
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bersuker G.,Gilmer D. C.,Veksler D.,Kirsch P.,Vandelli L.,Padovani A.,Larcher L.,McKenna K.,Shluger A.,Iglesias V.,Porti M.,Nafría M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3671565

Reference51 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Reproducible switching effect in thin oxide films for memory applications

3. Resistive switching in transition metal oxides

4. Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

5. Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

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