Analysis of high resistive conduction mechanism in HfO<sub>2</sub>-based ReRAM devices-Reference-Cited by-同舟云学术

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Analysis of high resistive conduction mechanism in HfO₂-based ReRAM devices

Published:2024-05-08 Issue: Volume:176 Page:1-4
ISSN:
Container-title:2024 IEEE Latin American Electron Devices Conference (LAEDC)
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Author:

Guitarra Silvana¹,Trojman Lionel²,Raymond Laurent³

Affiliation:

1. Universidad San Francisco de Quito,IMNE Colegio de Ciencias e Ingniería,Quito,Ecuador

2. Institut Supérieur d’Electronique de Paris,LISITE, ISEP,Paris,France

3. Aix-Marseille Université Université de Toulon,CNRS Centre de Physique Théorique - UMR 7332,Marseille,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10555569/10555588/10555862.pdf?arnumber=10555862

Reference19 articles.

1. Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

2. Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

3. Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

4. Electrical Properties and Fatigue Behaviors of ZrO[sub 2] Resistive Switching Thin Films

5. Variability in Resistive Memories

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